Semiconductor device and imaging apparatus

ABSTRACT

In a semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 16/065,972, filed Jun. 25, 2018, which is a U.S.National Phase of International Patent Application No. PCT/JP2016/085576filed Nov. 30, 2016, which claims priority benefit of Japanese PatentApplication No. JP 2016-006517 filed in the Japan Patent Office on Jan.15, 2016. Each of the above-referenced applications is herebyincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present technology relates to semiconductor devices and imagingapparatuses, and more specifically, relates to a semiconductor devicehaving a semiconductor chip mounted thereon and an imaging apparatus.

BACKGROUND ART

In related art, a semiconductor device having plurality of semiconductorchips bonded together and arranged on top of each other to achieveminiaturization has been used. Specifically, in an imaging apparatus, animage sensor chip in which pixels having a photoelectric conversiondevice are arranged in a two-dimensional lattice pattern and an imageprocessing chip for processing an image signal output from the imagesensor chip, which are individually manufactured on the basis of theirrespective manufacturing processes. Then, they are bonded together andarranged on top of each other, and so the resultant miniaturized imagingapparatus is used. In an example, there has been developed a system inwhich these semiconductor chips are bonded together using an adhesiveand arranged on top of each other (e.g., refer to Patent Literature 1).

CITATION LIST Patent Literature

Patent Literature 1:

-   JP 2010-245506A

DISCLOSURE OF INVENTION Technical Problem

In the existing technique described above, the semiconductor chips arebonded together and thermally coupled to each other, so they aredisadvantageously susceptible to the influence of thermal conduction tothe semiconductor chip. In other words, the heat generated in asemiconductor chip having a large heating value increases thetemperature of another semiconductor chip, resulting in deterioration inthe performance disadvantageously. In the imaging apparatus describedabove, the image processing chip operates at high speed and hasrelatively high degree of integration, thereby generating a large amountof heat. On the other hand, an image sensor chip having a photoelectricconversion device has a property that thermal noise increases with anincrease in temperature. As described above, in the imaging apparatusdescribed above, these semiconductor chips are bonded together, thetemperature of the image sensor chip rises due to thermal conductionfrom the image processing chip, so the thermal noise increases and thesignal-to-noise ratio (S/N ratio) decreases.

The present technology is developed in view of such circumstances and isintended to reduce the size of a semiconductor device having asemiconductor chip mounted thereon while reducing the influence ofthermal conduction to the semiconductor chip in the semiconductordevice.

Solution to Problem

The present technology has been made to solve the above problem.According to a first aspect of the present technology, a semiconductordevice includes: a first package provided with a first substrate underwhich a semiconductor chip configured to output a signal and a firstwiring electrically connected to the semiconductor chip are arranged; asecond package provided with a second substrate above which a processingcircuit configured to process the output signal, a second wiringelectrically connected to the processing circuit, and an encapsulantconfigured to seal the processing circuit are arranged, thesemiconductor chip and the encapsulant being arranged to face each otherin a non-contact manner; and a connection portion configured toelectrically connect the first wiring and the second wiring. Thisproduces an effect that the semiconductor chip and the encapsulant arearranged to face each other in a non-contact manner. The thermalconduction between the processing circuit and the semiconductor chip isenvisaged to be prevented.

In addition, according to the first aspect, the connection portion mayinclude solder. This produces an effect that the first wiring and thesecond wiring are connected by solder.

In addition, according to the first aspect, the connection portion maybe provided with a spacer used to define a space between the firstsubstrate and the second substrate. This produces an effect that thespace between the first substrate and the second substrate is defined.

In addition, according to the first aspect, the semiconductor device mayfurther include a second connection portion electrically connected tothe second wiring, the second connection portion including second soldersoldered at a temperature different from that of the solder. Thisproduces an effect that the connection portion and the second connectionportion include their corresponding solder having different solderingtemperatures.

In addition, according to the first aspect, the second package may beprovided with the second substrate above which a conductive member isfurther arranged in an opening formed in the encapsulant, the conductivemember being electrically connected to the second wiring, and theconnection portion may electrically connect the first wiring and thesecond wiring through the conductive member. This produces an effectthat the first wiring and the second wiring are connected through theconductive member arranged in the opening of the encapsulant.

In addition, according to a second aspect of the present technology, animaging apparatus include: a first package provided with a firstsubstrate under which an image sensor configured to output a signalcorresponding to irradiating light and a first wiring electricallyconnected to the image sensor are arranged; a second package providedwith a second substrate above which a processing circuit configured toprocess the output signal, a second wiring electrically connected to theprocessing circuit, and an encapsulant configured to seal the processingcircuit are arranged, the image sensor and the encapsulant beingarranged to face each other in a non-contact manner; and a connectionportion configured to electrically connect the first wiring and thesecond wiring. This produces an effect that the image sensor and theencapsulant are arranged to face each other in a non-contact manner.

In addition, according to the second aspect, the first package may beprovided with the first substrate including glass. This produces aneffect that the first substrate includes glass.

In addition, according to the second aspect, the first package may beprovided with the first substrate under which the image sensor isarranged, the image sensor outputting the signal corresponding to theirradiating light transmitting through the first substrate. Thisproduces an effect that the image sensor is irradiated with lightthrough the first substrate.

In addition, according to the second aspect, the imaging apparatus mayfurther include a lens module configured to form an optical image on theimage sensor through the first substrate. This produces an effect thatthe lens module is arranged on the image sensor.

Advantageous Effects of Invention

According to the present technology, in the semiconductor device havingthe semiconductor chip mounted thereon, it is possible to achieve anadvantageous effect of reducing the size of the semiconductor devicewhile reducing the influence of thermal conduction to the semiconductorchip. Note that the effect disclosed herein is not necessarily limitedand may be any effect disclosed in the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a first embodiment of the present technology.

FIGS. 2A, 2B, 2C, and 2D are diagrams illustrating an example of amanufacturing process of an image sensor package 100 according to thefirst embodiment of the present technology.

FIGS. 3A, 3B, and 3C are diagrams illustrating an example ofmanufacturing process of an image processing package 200 according tothe first embodiment of the present technology.

FIGS. 4A and 4B are diagrams illustrating an example of manufacturingprocess of an image processing package 200 according to the firstembodiment of the present technology.

FIGS. 5A and 5B are diagrams illustrating an example of a manufacturingprocess of the imaging apparatus 10 according to the first embodiment ofthe present technology.

FIG. 6 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a second embodiment of the present technology.

FIG. 7 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a third embodiment of the present technology.

FIG. 8 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a fourth embodiment of the present technology.

FIG. 9 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a fifth embodiment of the present technology.

MODE(S) FOR CARRYING OUT THE INVENTION

Modes for carrying out the present technology (hereinafter referred toas embodiments) will be described below. The description is given in thefollowing order.

1. First embodiment (example of a case of using a via plug)

2. Second embodiment (example of a case of omitting a via plug)

3. Third embodiment (example of a case of using a first connectionportion having a spacer)

4. Fourth embodiment (example of a case where an image sensor isarranged in a recess provided in an image sensor substrate)

5. Fifth embodiment (example of an imaging apparatus having a lensmodule mounted thereon)

1. First Embodiment

[Configuration of Semiconductor Device]

FIG. 1 is a diagram illustrating a configuration example of an imagingapparatus 10 according to a first embodiment of the present technology.This figure is a cross-sectional view illustrating the configuration ofan imaging apparatus used for a camera or the like. The imagingapparatus 10 includes an image sensor package 100, an image processingpackage 200, a first connection portion 300, and a second connectionportion 400.

The image sensor package 100 is a package having an image sensor. Theimage sensor package 100 includes an image sensor substrate 110, a firstwiring 120, a bump 130, an image sensor 140, an adhesive 150, and aprotective film 160. Moreover, the image sensor package 100 is anexample of the first package recited in the claims.

The image sensor 140 is a semiconductor chip in which pixels, each ofwhich has a photoelectric conversion device that converts irradiatinglight into electric signals, are arranged in a two-dimensional latticepattern. The image sensor 140 outputs an image signal that is a signalcorresponding to the irradiating light. In addition, in this figure, theimage sensor 140 is irradiated with light through the image sensorsubstrate 110. Thus, the image sensor 140 has a light receiving surfaceon which pixels are arranged. The light receiving surface is arranged toface the image sensor substrate 110. A substrate having transparency isused for the image sensor substrate 110.

The bump 130 electrically connects the image sensor 140 and the firstwiring 120. In an example, the bump 130 can include a metal such ascopper (Cu) or solder, and can be formed in a columnar shape on theimage sensor 140. Specifically, it is possible to use a stud bumpincluding a bump or gold wire in which solder coating is formed on thesurface of columnar copper (Cu) and nickel (Ni) formed by plating.

The image sensor substrate 110 is a substrate having the image sensor140 or the like mounted thereon. This image sensor substrate 110includes a transparent base material, for example, glass. In addition,the use of glass having the thermal expansion coefficient that issubstantially equal to that of the image sensor 140, for example, Pyrex(registered trademark) for the image sensor substrate 110 makes itpossible to reduce the stress generated with the change in temperature.Moreover, the image sensor substrate 110 is an example of the firstsubstrate recited in claims.

The first wiring 120 is a wiring that is electrically connected to theimage sensor 140 and transfers an electric signal from the image sensor140. The first wiring 120 in the figure is electrically connected withthe image sensor 140 through the bump 130. The first wiring 120 can beconfigured as a film of metal such as copper (Cu). In addition, thefirst wiring 120 can include the coating formed in the opening of theprotective film 160 described later and intended to improve thesolderability and to prevent excessive formation of an alloy layer onthe soldering surface. This coating can include, in an example, nickel(Ni) and gold (Au) arranged on top of each other in this order.Moreover, a stress relaxation layer (not shown) can be arranged betweenthe first wiring 120 and the image sensor substrate 110. This is forpreventing peeling of the first wiring 120 or occurrence of a crack inthe image sensor substrate 110 caused by a difference in thermalexpansion coefficients between the first wiring 120 and the image sensorsubstrate 110.

The adhesive 150 fixes the image sensor 140 to the image sensorsubstrate 110. This adhesive 150 is arranged on the peripheral portionof the image sensor 140 and fixes the image sensor 140 to reinforce theconnection between the image sensor 140 and the first wiring 120 by thebump 130. In addition, the light receiving surface of the image sensor140 is hermetically sealed together with the image sensor substrate 110.In an example, an epoxy adhesive can be used for the adhesive 150.

The protective film 160 is a film that protects the first wiring 120. Inan example, a film including a solder resist can be used for theprotective film 160. In addition, in the case where the stressrelaxation layer is arranged, the protective film 160 including the samematerial as the stress relaxation layer is used. This is for preventingpeeling of the protective film 160 or the like due to the difference inthermal expansion coefficients between the two. Moreover, the protectivefilm 160 has an opening formed in a portion where the first connectionportion 300 described later and the first wiring 120 are connected.

The image processing package 200 is a package having a processingcircuit for processing the image signal that is output from the imagesensor 140. This image processing package 200 includes an imageprocessing substrate 210, a second wiring 220, a bump 230, an imageprocessing chip 240, a protective film 260, an encapsulant 270, and avia plug 280. Moreover, the image processing package 200 is an exampleof the second package recited in the claims.

The image processing chip 240 processes the image signal output from theimage sensor 140. This image processing chip 240 performs output of acontrol signal for controlling the image sensor 140 and processing ofthe image signal output from the image sensor 140. In an example, theprocessing of the image signal corresponds to analog-to-digitalconversion for converting an analog image signal output by the imagesensor 140 into a digital image signal. Moreover, the image processingchip 240 is an example of the processing circuit recited in the claims.

The bump 230 electrically connects the image processing chip 240 and thesecond wiring 220. This bump 230 can have a similar configuration to thebump 130. Moreover, although the image processing package 200 in thefigure shows an example in which the image processing chip 240 isflip-chip mounted, the image processing chip 240 can also be mounted bywire bonding. In this case, a bonding wire, instead of the bump 230, isused to connect the image processing chip 240 and the second wiring 220.

The image processing substrate 210 is a substrate on which an electroniccircuit such as the image processing chip 240 for driving the imagesensor 140 is mounted. This electronic circuit is an electronic circuitincluding the image processing chip 240 and passive components (notshown) such as resistors and capacitors. In an example, a substratehaving a glass-containing epoxy resin can be used for the imageprocessing substrate 210. In this case, it is preferable to use asubstrate having the thermal expansion coefficient that is substantiallyequal to that of the image sensor substrate 110. This is because it ispossible to prevent the concentration of stress applied to the firstconnection portion 300 described later and to improve the reliability ofthe connection. In addition, glass that is the same base material as theimage sensor substrate 110 can be used for the image processingsubstrate 210. Moreover, although the image processing substrate 210 inthis figure has a configuration in which the second wiring 220 isarranged on both sides, this is not limited thereto, and a multilayerboard in which an insulating layer and a wiring layer are arranged ontop of each other can be used. Moreover, the image processing substrate210 is an example of the second substrate recited in the claims.

The second wiring 220 is a wiring that is electrically connected to theimage processing chip 240 for transferring an electric signal to theimage processing chip 240. A wiring including a metal film such ascopper (Cu) can be used for the second wiring 220, which is similar tothe first wiring 120. In addition, the second wiring 220 is formed onboth sides of the image processing substrate 210. Moreover, the secondwirings 220 arranged on the front surface and the back surface of theimage processing substrate 210 can be connected to each other through athrough hole (not shown) or the like.

The protective film 260 is a film for protecting the second wiring 220.A film including a solder resist can be used for the protective film260, which is similar to the protective film 160. In addition, theprotective film 260 is arranged on both sides of the image processingsubstrate 210. Furthermore, the protective film 260 has an openingformed in a portion where the via plug 280 described later is arrangedand a portion where the second connection portion 400 is arranged.

The encapsulant 270 is used to seal electronic components, such as theimage processing chip 240, mounted on the image processing substrate210. In an example, an encapsulant formed by molding an epoxy resin thatcontains filler material can be used for the encapsulant 270. Inaddition, the encapsulant 270 has an opening formed in a portion wherethe via plug 280 described later is arranged.

The via plug 280 is arranged in the opening formed in the encapsulant270 and is electrically connected to the second wiring 220. The via plug280 can include, in an example, the solder filled in the opening formedin the encapsulant 270. The via plug 280 in this figure is arranged inthe opening formed in the protective film 260 and the encapsulant 270.The via plug 280 is an example of the conductive member recited in theclaims.

The first connection portion 300 electrically connects the first wiring120 and the second wiring 220. The first connection portion 300 in thisfigure electrically connects the first wiring 120 and the second wiring220 through the via plugs 280. This first connection portion 300 allowsthe image sensor package 100 to be fixed to the image processing package200. In this event, the image sensor 140 and the encapsulant 270 arearranged to face each other in a non-contact manner, and the both arefixed. In an example, spherical-shaped solder can be used for the firstconnection portion 300. A plurality of the first connection portions 300are arranged between the image sensor package 100 and the imageprocessing package 200. Moreover, the first connection portion 300 is anexample of the connection portion recited in the claims.

The second connection portion 400 is electrically connected to thesecond wiring 220 and exchanges electric signals with an electriccircuit mounted on an external circuit of the imaging apparatus 10, forexample, a main board of the camera. The second connection portion 400is used for outputting an image signal processed by the image processingchip 240 to an external circuit and supplying from an external circuitof the power supply consumed in the imaging apparatus 10. Thespherical-shaped solder can be used for the second connection portion400, which is similar to the first connection portion 300. In addition,the second connection portion 400 is connected to the second wiring 220at the opening formed in the protective film 260.

The image signal output by the image sensor 140 is input to the imageprocessing chip 240, through the bump 130, the first wiring 120, thefirst connection portion 300, the via plug 280, the second wiring 220,and the bump 230 in this order. In addition, the image signal processedby the image processing chip 240 is output to the outside of the imagingapparatus 10, through the bump 230, the second wiring 220, and thesecond connection portion 400 in this order.

With the recent increase in resolution such as 4K image or the like, thenumber of pixels of the image sensor 140 increases, and so it isnecessary to shorten the processing time in the image processing chip240. Thus, the use of the image processing chip 240 that operates athigh speed allows improvement of the throughput of the image signal perunit time in the imaging apparatus 10 to be achieved. Such an imageprocessing chip 240 has high power consumption and large temperaturerise. On the other hand, the photoelectric conversion device of theimage sensor 140 has such a property that the performance isdeteriorated, for example, the signal-to-noise ratio (S/N ratio) isreduced in a high temperature environment. The thermal conduction isnecessary to be reduced to prevent degradation of the performance of theimage sensor 140 due to the influence of heat generated in the imageprocessing chip 240. Thus, in the imaging apparatus 10 in this figure,the image sensor 140 and the encapsulant 270 are arranged in anon-contact manner, and so a gap 600 is defined between the image sensor140 and the encapsulant 270. This allows the thermal conduction pathonly to the first connection portion 300, thereby preventing the thermalconduction between the image sensor 140 and the image processing chip240. In addition, the convection occurring in the gap 600 enables theimage sensor 140 to be cooled, and so it is possible to reduce anincrease in the temperature of the image sensor 140. In addition, theuse of a glass substrate having low thermal conductivity for the imagesensor substrate 110 enables the heat transferred to the image sensor140 to be to further reduced. This makes it possible to preventdeterioration of the performance of the image sensor 140 due to theinfluence of heat generated in the image processing chip 240.

Further, the signal is transferred through the first connection portion300 arranged in the vicinity of the position where the image sensor 140and the image processing chip 240 face each other, so the size of theimaging apparatus 10 can be reduced. In an example, assuming that thethickness of the image sensor 140 and the height of the bump 130 are0.12 mm and 0.03 mm, respectively, the total of these is 0.15 mm. On theother hand, the arrangement of the first connection portion 300 having adiameter of 0.2 mm allows a space between the image sensor 140 and theencapsulant 270 to be approximately 0.05 mm. In this case, thearrangement pitch of the first connection portion 300 can be set to 0.4mm. Furthermore, as illustrated in this figure, the first connectionportion 300 is arranged in the vicinity of the image sensor 140 and theimage processing chip 240 in such a manner that it may be adjacent tothe image sensor 140 and the image processing chip 240. This makes itpossible to reduce the size of the imaging apparatus 10, as comparedwith a case where the image sensor 140 and the image processing chip 240are arranged on a plane and mounted in one package. In addition, it ispossible to shorten the signal transfer path between the image sensor140 and the image processing chip 240, thereby transferring a highfrequency signal. Thus, it is possible to improve the processing speedof the image processing chip.

Further, in the imaging apparatus 10 in this figure, electrical andoptical tests can be performed on the image sensor package 100 and theimage processing package 200 before connecting these packages with eachother using the first connection portion 300. This makes it possible toimprove the yield of the imaging apparatus 10.

The image sensor 140 and the image processing chip 240 can bemanufactured by different processes, so it is possible to select anoptimum process for the respective semiconductor chips. In an example,the image processing chip 240 includes a digital circuit as a maincomponent, which necessitates a large circuit scale and high speedoperation. Thus, a miniaturized complementary metal-oxide-semiconductor(CMOS) technology is applied and it is manufactured. On the other hand,the image sensor 140 includes an analog circuit for amplifying andoutputting photoelectrically converted electrical signals as a maincomponent, so there is not necessary for high-speed CMOS technologyunlike the image processing chip 240, and it can be manufactured by lowcost technology. In this manner, the image sensor 140 and the imageprocessing chip 240 can be manufactured by their respective optimalprocesses. Thus, the overall manufacturing cost can be reduced whilemaintaining the necessary performance as compared with the case whereboth are formed on one semiconductor chip.

Moreover, it is preferable to use solder materials having differentsoldering temperatures for the first connection portion 300 and thesecond connection portion 400. Specifically, in the manufacturingprocess of the imaging apparatus 10, one of the first connection portion300 and the second connection portion 400, which is first soldered inthe soldering order, uses solder having a higher soldering temperaturethan that of the other. In the manufacturing process of the imagingapparatus 10 described later, the first connection portion 300 issoldered before the second connection portion 400, and so it is possibleto use solder having a relatively high soldering temperature such as tin(Sn)-silver (Ag)-copper(Cu) solder for the first connection portion 300.In addition, it is possible to use solder having a relatively lowsoldering temperature such as tin (Sn)-zinc (Zn)-bismuth (Bi) solder forthe second connection portion 400. This makes it possible to prevent theremelting of the first connection portion 300 when the second connectionportion 400 is soldered, thereby preventing the occurrence of troublessuch as positional deviation of the image sensor package 100.

[Manufacturing Method of Semiconductor Device]

FIGS. 2A, 2B, 2C, and 2D are diagrams illustrating an example of amanufacturing process of the image sensor package 100 according to thefirst embodiment of the present technology. The first wiring 120 and theprotective film 160 are first sequentially formed on the image sensorsubstrate 110 (FIG. 2A). The image sensor 140 is then mounted (FIG. 2B).This can be carried out by mounting the image sensor 140 on the firstwiring 120 while aligning it, placing it in a reflow furnace, andsoldering it. Then, an adhesive 150 is applied to the peripheral portionof the image sensor 140 and cured (FIG. 2C). This makes it possible tomanufacture the image sensor package 100. Then, the first connectionportion 300 is arranged in the opening of the protective film 160, andsoldering is performed on it (FIG. 2D).

FIGS. 3A, 3B, and 3C are diagrams illustrating an example of amanufacturing process of the image processing package 200 according tothe first embodiment of the present technology. The second wiring 220and the protective film 260 are first sequentially formed on the imageprocessing substrate 210 (FIG. 3A). Then, the image processing chip 240is mounted (FIG. 3B). This can be carried out in a similar manner to themounting of the image sensor 140. Then, the encapsulant 270 is formed bymolding (FIG. 3C).

FIGS. 4A and 4B are diagrams illustrating an example of a manufacturingprocess of the image processing package 200 according to the firstembodiment of the present technology. In the image processing package200 on which the encapsulant 270 is formed, an opening 271 is formed inthe encapsulant 270 (FIG. 4A). This can be carried out, in an example,by irradiating the encapsulant 270 with light produced from the carbondioxide laser to cause ablation and by removing the encapsulant 270 inthe irradiated portion. Then, the via plug 280 is arranged in theopening 271 (FIG. 4B). This can be formed, in an example, by arrangingspherical-shaped solder and a flux in the opening 271 and by meltingthis solder in a reflow furnace. This makes it possible to manufacturethe image processing package 200.

FIGS. 5A and 5B are diagrams illustrating an example of a manufacturingprocess of the imaging apparatus 10 according to the first embodiment ofthe present technology. The image sensor package 100 on which the firstconnection portion 300 is arranged is first placed on the imageprocessing package 200. In this event, the via plug 280 of the imageprocessing package 200 and the first connection portion 300 are alignedand arranged. This allows the image sensor 140 of the image sensorpackage 100 and the image processing chip 240 of the image processingpackage 200 to be arranged to face each other. In this event, the imagesensor 140 and the encapsulant 270 are held in a non-contact state.Then, the first connection portion 300 and the second wiring 220 aresoldered to each other in a reflow furnace (FIG. 5A). Then, the secondconnection portion 400 is arranged in the opening of the protective film260 of the image processing package 200 (FIG. 5B). This can be carriedout by soldering. The imaging apparatus 10 can be manufactured using theabove processes.

Moreover, the manufacturing process of the imaging apparatus 10 is notlimited to the example described above. In an example, the imageprocessing package 200 is arranged on the main board of a camera or thelike through the second connection portion 400. Then, a manufacturingprocess in which the image sensor package 100 is arranged in the imageprocessing package 200 through the first connection portion 300 can beused. In this case, it is possible to use solder having a relatively lowsoldering temperature for the first connection portion 300 and to usesolder having a relatively high soldering temperature for the secondconnection portion 400. In addition, although the embodiment of thepresent technology is described taking the imaging apparatus 10 as anexample, the present technology is applicable to other semiconductordevices.

As described above, in the first embodiment of the present technology,the image sensor 140 and the image processing chip 240 are arranged toface each other while being adjacent to each other, and the image sensor140 and the encapsulant 270 around the image processing chip 240 arearranged in a non-contact manner. This makes it possible to reduce thesize of the imaging apparatus 10 while reducing the influence of thermalconduction to the image sensor 140.

2. Second Embodiment

In the embodiment described above, the first wiring 120 and the secondwiring 220 are electrically connected through the via plug 280 formed inthe encapsulant 270. On the other hand, in a second embodiment of thepresent technology, the first connection portion 300 directly connectsthe first wiring 120 and the second wiring 220. This can make itunnecessary to use the via plug 280, thereby simplifying theconfiguration of the imaging apparatus 10.

[Configuration of Semiconductor Device]

FIG. 6 is a diagram illustrating a configuration example of an imagingapparatus 10 according to the second embodiment of the presenttechnology. The imaging apparatus 10 in this figure is different fromthe imaging apparatus 10 described with reference to FIG. 1 in thefollowing points. First, the encapsulant 270 is arranged only in theperipheral portion of the image processing chip 240, and the firstconnection portion 300 directly connects the first wiring 120 and thesecond wiring 220 without through the via plug 280. Thus, the imagingapparatus 10 in this figure may not necessary to have the via plug 280.

The other configuration of the imaging apparatus 10 than theconfiguration described above is similar to that of the imagingapparatus 10 described with reference to FIG. 1 , so a descriptionthereof will be omitted.

As described above, according to the second embodiment of the presenttechnology, the direct connection between the first wiring 120 and thesecond wiring 220 through the first connection portion 300 enables thevia plug 280 to be omitted, thereby simplifying the imaging apparatus10.

3. Third Embodiment

In the second embodiment described above, the first connection portion300 including solder is used. On the other hand, in a third embodimentof the present technology, the connection is performed using the firstconnection portion 300 having a spacer. This allows the space betweenthe first substrate 110 and the second substrate 210 to be defined, andthereby preventing the contact between the image sensor 140 and theencapsulant 270.

[Configuration of Semiconductor Device]

FIG. 7 is a diagram illustrating a configuration example of the imagingapparatus 10 according to the third embodiment of the presenttechnology. The imaging apparatus 10 in this figure is different fromthe imaging apparatus 10 described with reference to FIG. 6 in that aspacer 310 is provided inside the first connection portion 300.

The spacer 310 defines the space between the first substrate 110 and thesecond substrate 210. A spherical epoxy resin can be used for the spacer310. As described above, the first connection portion 300 according tothe third embodiment of the present technology includes solder havingthe spacer 310 therein.

The use of the spacer 310 allows the space between the first substrate110 and the second substrate 210 to be defined. This makes it possibleto prevent the image sensor 140 and the encapsulant 270 from coming intocontact with each other when soldering using the first connectionportion 300 is performed. In addition, it is possible to improve theaccuracy of the inclination of the image sensor substrate 110 withrespect to the image processing substrate 210.

The other configuration of the imaging apparatus 10 than theconfiguration described above is similar to that of the imagingapparatus 10 described with reference to FIG. 6 , so a descriptionthereof will be omitted.

As described above, according to the third embodiment of the presenttechnology, the space between the first substrate 110 and the secondsubstrate 210 is defined by the spacer 310, so it is possible to preventthe image sensor 140 and the encapsulant 270 from coming into contactwith each other at the time of soldering.

4. Fourth Embodiment

In the first embodiment described above, the flat-plate image sensorsubstrate 110 is used. On the other hand, in a fourth embodiment of thepresent technology, the image sensor substrate 110 having a recess isused, and the image sensor 140 is arranged in the recess. This makes itpossible to widen the space between the image sensor 140 and theencapsulant 270, thereby reducing the temperature rise of the imagesensor 140.

[Configuration of Semiconductor Device]

FIG. 8 is a diagram illustrating a configuration example of an imagingapparatus 10 according to the fourth embodiment of the presenttechnology. The imaging apparatus 10 in this figure is different fromthe imaging apparatus 10 described with reference to FIG. 1 in that animage sensor substrate 110 having a recess is used and the image sensor140 is arranged in the recess.

As illustrated in this figure, in the image sensor package 100 accordingto the fourth embodiment of the present technology, the first wiring 120is extended in the recess provided in the image sensor substrate 110 andthe image sensor 140 is embedded and mounted in the recess. This makesit possible to widen the space between the image sensor 140 and theencapsulant 270, thereby further reducing the temperature rise of theimage sensor 140. In addition, in the case of setting the same space asthe imaging apparatus 10 described in FIG. 1 , it is possible to furtherreduce the size of the first connection portion 300 and arrange it at anarrow pitch. This makes it possible to reduce the size of the imagesensor package 100.

The other configuration of the imaging apparatus 10 than theconfiguration described above is similar to that of the imagingapparatus 10 described in FIG. 1 , so a description thereof will beomitted.

As described above, according to the fourth embodiment of the presenttechnology, it is possible to widen the space between the image sensor140 and the encapsulant 270, thereby reducing the temperature rise ofthe image sensor 140.

5. Fifth Embodiment

The embodiment described above is based on the assumption that theimaging apparatus includes the image sensor package 100 and the imageprocessing package 200. On the other hand, a fifth embodiment of thepresent technology is based on the assumption that the imaging apparatusin which a lens module is arranged is used. This makes it possible toreduce the size of the imaging apparatus 10 while reducing the influenceof thermal conduction to the image sensor 140 in the imaging apparatushaving the lens module arranged therein.

[Configuration of Imaging Apparatus] FIG. 9 is a diagram illustrating aconfiguration example of the imaging apparatus 10 according to the fifthembodiment of the present technology. This imaging apparatus 10 isdifferent from the imaging apparatus 10 described in FIG. 1 in that itfurther includes a lens module 500.

The lens module 500 forms an optical image on the image sensor 140. Thelens module 500 includes a lens 510 and a lens holding portion 520.

The lens 510 converges light. The lens holding portion 520 holds thelens 510. Moreover, a lens driving mechanism that adjusts the focalposition by changing the position of the lens 510 may be arranged in thelens holding portion 520.

The lens module 500 is arranged on the image sensor substrate 110. Whenthe lens module 500 is arranged on the image sensor substrate 110 inthis manner, deflection occurs in the image sensor substrate 110 and theimage sensor 140 is deformed, which may have an influence on theperformance of the image sensor 140 in some cases. However, the use ofthe image sensor substrate 110 including glass makes it possible toreduce the deflection of the image sensor substrate 110, therebyreducing the influence on the image sensor 140. This is because theglass is a base material having high rigidity and so it is difficult fordeflection to occur. In addition, the arrangement of an infrared lightcut filter on the image sensor substrate 110 including glass makes itpossible to eliminate the arrangement of the infrared light cut filteron the lens module 500, thereby reducing the cost of the lens module500.

The other configuration of the imaging apparatus 10 than theconfiguration described above is similar to that of the imagingapparatus 10 described in FIG. 1 , so a description thereof will beomitted.

As described above, according to the fifth embodiment of the presenttechnology, in the imaging apparatus 10 including the lens module 500,it is possible to reduce the size of the imaging apparatus 10 whilereducing the influence of thermal conduction to the image sensor 140.

As described above, according to the embodiments of the presenttechnology, the image sensor 140 and the encapsulant 270 around theimage processing chip 240 are arranged in a non-contact manner, so it ispossible to reduce the influence of thermal conduction to the imagesensor 140 while reducing the size of the imaging apparatus 10. Thismakes is possible to prevent the deterioration of the performance of theimage sensor 140.

The above-described embodiments are examples for embodying the presenttechnology, and matters in the embodiments each have a correspondingrelationship with disclosure-specific matters in the claims. Likewise,the matters in the embodiments and the disclosure-specific matters inthe claims denoted by the same names have a corresponding relationshipwith each other. However, the present technology is not limited to theembodiments, and various modifications of the embodiments may beembodied in the scope of the present technology without departing fromthe spirit of the present technology.

The processing sequences that are described in the embodiments describedabove may be handled as a method having a series of sequences or may behandled as a program for causing a computer to execute the series ofsequences and recording medium storing the program. As the recordingmedium, a hard disk, a CD (Compact Disc), an MD (MiniDisc), and a DVD(Digital Versatile Disk), a memory card, and a Blu-ray disc (registeredtrademark) can be used.

In addition, the effects described in the present specification are notlimiting but are merely examples, and there may be other effects.

Additionally, the present technology may also be configured as below.

(1)

A semiconductor device including:

a first package provided with a first substrate under which asemiconductor chip configured to output a signal and a first wiringelectrically connected to the semiconductor chip are arranged;

a second package provided with a second substrate above which aprocessing circuit configured to process the output signal, a secondwiring electrically connected to the processing circuit, and anencapsulant configured to seal the processing circuit are arranged, thesemiconductor chip and the encapsulant being arranged to face each otherin a non-contact manner; and

a connection portion configured to electrically connect the first wiringand the second wiring.

(2)

The semiconductor device according to (1),

in which the connection portion includes solder.

(3)

The semiconductor device according to (2),

in which the connection portion is provided with a spacer used to definea space between the first substrate and the second substrate.

(4)

The semiconductor device according to (2) or (3), further including:

a second connection portion electrically connected to the second wiring,the second connection portion including second solder soldered at atemperature different from that of the solder.

(5)

The semiconductor device according to (1),

in which the second package is provided with the second substrate abovewhich a conductive member is further arranged in an opening formed inthe encapsulant, the conductive member being electrically connected tothe second wiring, and

the connection portion electrically connects the first wiring and thesecond wiring through the conductive member.

(6)

An imaging apparatus including:

a first package provided with a first substrate under which an imagesensor configured to output a signal corresponding to irradiating lightand a first wiring electrically connected to the image sensor arearranged;

a second package provided with a second substrate above which aprocessing circuit configured to process the output signal, a secondwiring electrically connected to the processing circuit, and anencapsulant configured to seal the processing circuit are arranged, theimage sensor and the encapsulant being arranged to face each other in anon-contact manner; and

a connection portion configured to electrically connect the first wiringand the second wiring.

(7)

The imaging apparatus according to (6),

in which the first package is provided with the first substrateincluding glass.

(8)

The imaging apparatus according to (7),

in which the first package is provided with the first substrate underwhich the image sensor is arranged, the image sensor outputting thesignal corresponding to the irradiating light transmitting through thefirst substrate.

(9)

The imaging apparatus according to (8), further including:

a lens module configured to form an optical image on the image sensorthrough the first substrate.

REFERENCE SIGNS LIST

-   10 imaging apparatus-   100 image sensor package-   110 image sensor substrate-   120 first wiring-   130, 230 bump-   140 image sensor-   150 adhesive-   160, 260 protective film-   200 image processing package-   210 image processing substrate-   220 second wiring-   240 image processing chip-   270 encapsulant-   271 opening-   280 via plug-   300 first connection portion-   310 spacer-   400 second connection portion-   500 lens module-   510 lens-   520 lens holding portion-   600 gap

What is claimed is:
 1. A semiconductor device, comprising: a firstpackage that includes: a first substrate; a first semiconductor chipconfigured to output a signal, wherein the first semiconductor chip isbelow the first substrate; a first wiring electrically connected to thefirst semiconductor chip through a metal bump, wherein the first wiringis below the first substrate; and a first protective film that includesa first opening portion; a second package that includes: a secondsubstrate; a second semiconductor chip configured to process the signaloutput from the first semiconductor chip, wherein the secondsemiconductor chip is above the second substrate; a second wiringelectrically connected to the second semiconductor chip, wherein thesecond wiring is on each of a front surface of the second substrate anda back surface of the second substrate; an encapsulant configured toseal the second semiconductor chip and a conductive member in an openingin the encapsulant, wherein the first semiconductor chip faces theencapsulant in a non-contact manner and a gap is defined between thefirst semiconductor chip and the encapsulant to be 0.05 mm; and a secondprotective film that includes a second opening portion, wherein thesecond protective film is on each of the front surface of the secondsubstrate and the back surface of the second substrate; a firstconnection portion configured to electrically connect the first wiringand the second wiring; and a second connection portion electricallyconnected to the second wiring, wherein the first protective film is incontact with each of the first connection portion, the first wiring, andthe first substrate, the first connection portion is in contact with thefirst wiring via the first opening portion, and the second connectionportion is in contact with the second wiring via the second openingportion.
 2. The semiconductor device according to claim 1, wherein thefirst connection portion includes a first solder.
 3. The semiconductordevice according to claim 2, wherein the second connection portionincludes a second solder soldered at a temperature different from thatof the first solder.
 4. The semiconductor device according to claim 1,wherein the conductive member is above the second substrate, theconductive member is electrically connected to the second wiring, andthe first connection portion is further configured to electricallyconnect the first wiring and the second wiring through the conductivemember.
 5. The semiconductor device according to claim 1, wherein thefirst connection portion comprises a spacer configured to define a spacebetween the first substrate and the second substrate.
 6. An imagingapparatus, comprising: a first package that includes: a first substrate;a first semiconductor chip configured to output a signal correspondingto irradiating light, wherein the first semiconductor chip is below thefirst substrate; a first wiring electrically connected to the firstsemiconductor chip through a metal bump, wherein the first wiring isbelow the first substrate; and a first protective film that includes afirst opening portion; a second package that includes: a secondsubstrate; a second semiconductor chip configured to process the signaloutput from the first semiconductor chip, wherein the secondsemiconductor chip is above the second substrate; a second wiringelectrically connected to the second semiconductor chip, wherein thesecond wiring is on each of a front surface of the second substrate anda back surface of the second substrate; an encapsulant configured toseal the second semiconductor chip and a conductive member in an openingin the encapsulant, wherein the first semiconductor chip faces theencapsulant in a non-contact manner and a gap is defined between thefirst semiconductor chip and the encapsulant to be 0.05 mm; and a secondprotective film that includes a second opening portion, wherein thesecond protective film is on each of the front surface of the secondsubstrate and the back surface of the second substrate; a firstconnection portion configured to electrically connect the first wiringand the second wiring; and a second connection portion electricallyconnected to the second wiring, wherein the first protective film is incontact with each of the first connection portion, the first wiring, andthe first substrate, the first connection portion is in contact with thefirst wiring via the first opening portion, and the second connectionportion is in contact with the second wiring via the second openingportion.
 7. The imaging apparatus according to claim 6, wherein thefirst substrate includes glass.
 8. The imaging apparatus according toclaim 6, wherein the irradiating light is transmittable through thefirst substrate.
 9. The imaging apparatus according to claim 6, furthercomprising a lens module configured to form an optical image on thefirst semiconductor chip through the first substrate.